Nonvolatile Memory Technologies

Evolution from ROM to modern Flash and emerging technologies

Legacy / Historical
Modern / Dominant
Emerging
Mask ROM ROM
~1960s

Data permanently encoded during manufacturing via photolithographic masks. True "read-only" — cannot be modified after fabrication.

Read
Fast
Write
N/A
Cycles
N/A
EPROM UV Erasable
1971

Erased by UV light through quartz window (15-20 min exposure). The classic chip with the little window on top.

Read
~150ns
Write
Minutes
Cycles
~100
EEPROM Byte-Erasable
1978

Electrically erasable at byte granularity. Still used in microcontrollers for small config storage (I²C serial EEPROMs).

Read
~200ns
Write
~5ms
Cycles
100K
NOR Flash XIP Capable
1988

Random-access reads, execute-in-place (XIP) capable. Used for firmware/BIOS storage. Block-erasable.

Read
~70ns
Write
~10μs/B
Cycles
100K
NAND Flash High Density
1989

Page-based access, optimized for density and sequential ops. Dominant in SSDs, SD cards, USB drives. 3D stacking now common.

Read
~25μs
Write
~300μs
Cycles
3K-100K
3D XPoint Optane
2015

Intel/Micron technology using phase-change materials. Byte-addressable with DRAM-like latency. (Discontinued 2022)

Read
~10μs
Write
~10μs
Cycles
10⁹+
MRAM Magnetic
~2016

Stores bits via magnetic tunnel junctions. SRAM-like speed, unlimited endurance, radiation-hard. Growing in embedded use.

Read
~10ns
Write
~10ns
Cycles
10¹⁵+
ReRAM Resistive
~2019

Resistance switching in metal-oxide films. Simple structure, good scaling potential. Used in some MCUs as embedded NVM.

Read
~50ns
Write
~50ns
Cycles
10⁶-10¹²

Floating-Gate Transistor — The Physics Behind Flash Memory

P-substrate S D FG CG G
No trapped electrons
Transistor conducts
1
P-substrate S D e⁻ e⁻ e⁻ CG G
Electrons trapped in FG
Higher Vth, blocks current
0